| PART |
Description |
Maker |
| BTA06-400A BTA06-400S BTA06-400T BTA06-700A BTA06- |
TRIAC|600V V(DRM)|6A I(T)RMS|TO-220
TRIAC|700V V(DRM)|6A I(T)RMS|TO-220 可控硅| 700V的五（DRM）的| 6A条口（T）的有效值|20
TRIAC|400V V(DRM)|6A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 6A条口T）的有效值|20
|
STMicroelectronics N.V.
|
| Z0409MF/1AA2 Z0402MF/1AA2 Z0405MF/0AA2 Z0405MF/1AA |
TRIAC|600V V(DRM)|1A I(T)RMS|TO-202VAR
IC 2.5V SDRAM 256M (16M X 16) 7.5NS BGA-60
TRIAC|700V V(DRM)|1A I(T)RMS|TO-202VAR 可控硅| 700V的五（DRM）的| 1A条口（T）的有效值|02VAR
IC PSRAM 16MB 48-VFBGA 可控硅| 800V的五（DRM）的| 1A条口（T）的有效值|02VAR
TRIAC|800V V(DRM)|1A I(T)RMS|TO-202VAR 可控硅| 800V的五（DRM）的| 1A条口（T）的有效值|02VAR
|
Cooper Bussmann, Inc.
STMicroelectronics N.V.
|
| 604B 1002A 1502A 602BI 1502BI |
TRIAC|400V V(DRM)|6A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|15A I(T)RMS|TO-218VAR
SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating
TRIAC|400V V(DRM)|10A I(T)RMS|TO-218VAR 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|18VAR
|
Rochester Electronics, LLC
|
| BTA04-800S BTA04-200S BTB04-800S |
TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
TRIAC|800V V(DRM)|4A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 4A条口（T）的有效值|20
|
STMicroelectronics N.V.
|
| CQ92MT CQ92BT |
TRIAC|200V V(DRM)|800MA I(T)RMS|TO-92
TRIAC|600V V(DRM)|800MA I(T)RMS|TO-92 可控硅| 600V的五（DRM）的| 800mA的我（T）的有效值|92
|
Orion Fans
|
| 6RT411HH |
THYRISTOR|GTO|4.4KV V(DRM)|TO-200VAR109 晶闸管| GTO的| 4.4KV五（DRM）的|00VAR109
|
Cornell Dubilier Electronics, Inc.
|
| FG1800CH40 |
THYRISTOR|GTO|2KV V(DRM)|TO-200AE 晶闸管| GTO的| 2kV的五（DRM）的|00AE
|
SIEMENS AG
|
| BT137B500T/R |
TRIAC|500V V(DRM)|8A I(T)RMS|SOT-404 可控硅| 500V五（DRM）的| 8A条口（T）的有效值|采用SOT - 404
|
Won-Top Electronics Co., Ltd.
|
| SSG25C100Y |
TRIAC|1KV V(DRM)|25A I(T)RMS|FBASE-R-HW30 可控硅| 1KV交五（DRM）的| 25A条口T）的有效值| FBASE受体- HW30
|
Won-Top Electronics Co., Ltd.
|
| 25AC60AM 50AC60AM 50AC20AM |
Evaluation Kit for the MAX1742, MAX1842
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
TRIAC|200V V(DRM)|50A I(T)RMS|TO-208VARM6 可控硅| 200伏五（DRM）的| 50A条口（T）的有效值|08VARM6
|
Cornell Dubilier Electronics, Inc.
|
